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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 9,
  • Issue 11,
  • pp. 871-876
  • (2013)

Dynamic and Transient Analysis of Silicon-Based Thin-Film Transistors: Channel Propagation Model

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Abstract

The quasi-static approach in the dynamic modeling considers that a thin-film transistor (TFT) reaches the steady-state instantaneously, and how to insert its behavior before steady-state is an important issue. In this paper, dynamic responses of silicon-based TFTs under gate-voltage pulse are studied in details. We experimentally distinguish quasi-static and non-quasi-static cases and we identify two charging regimes of the channel formation: channel propagation and charging of the fully propagated channel. We propose a model for the channel propagation, with a compact model-like approach to take into account the effect of defect states.

© 2013 IEEE

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