Abstract
The quasi-static approach in the dynamic modeling considers that a thin-film transistor
(TFT) reaches the steady-state instantaneously, and how to insert its behavior before steady-state
is an important issue. In this paper, dynamic responses of silicon-based TFTs under gate-voltage
pulse are studied in details. We experimentally distinguish quasi-static and non-quasi-static
cases and we identify two charging regimes of the channel formation: channel propagation and
charging of the fully propagated channel. We propose a model for the channel propagation, with a
compact model-like approach to take into account the effect of defect states.
© 2013 IEEE
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