Abstract
In this paper, we present a physically-based compact model for the sub-threshold
behavior in a TFT with an amorphous semiconductor channel. Both drift and
diffusion current components are considered and combined using an harmonic
average. Here, the diffusion component describes the exponential current behavior
due to interfacial deep states, while the drift component is associated with
presence of localized deep states formed by dangling bonds broken from weak
bonds in the bulk and follows a power law. The proposed model yields good
agreement with measured results.
© 2013 IEEE
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