Abstract
An AlGaN strain compensation layer (SCL) was proposed
to modulate the strain and thus alleviate the polarization of GaN-based light-emitting
diodes (LEDs). With the SCL, it was found that the 350 mA LED output power
could be enhanced from 258 to 285 mW. It was also found that the SCL could
alleviate the efficiency droop and reduce the forward voltage of the LEDs.
These improvements could all be attributed to in-plane tensile strain induced
by the AlGaN layer which could effectively compensate the compressive strain
induced by the InGaN well layers. From micro-Raman spectra measurement, it
was found that in-plane biaxial stresses in the reference and SCL samples
were 0.30 and 0.07 GPa, respectively.
© 2013 IEEE
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