Abstract
The thick-well InGaN/GaN short period multiple quantum well solar cells
(SCs) with
${{H}} _{2}$
in the GaN cap layer exhibits an improved open-circuit voltage,
fill factor, and conversion efficiency (
$\eta \%$
) compared with those of SCs without
the ramped
${{H}} _{2}$
in the GaN cap layer. The
$\eta
\%$
of the SC with the ramped
${{H}} _{2}$
in the GaN cap layer
(0.77%) shows a 67.4% improvement compared with that of the SC without the
ramped
${{H}} _{2}$
(0.46%). Furthermore, the
$\eta
\%$
of SC with patterned sapphire substrate (PSS) (1.36%)
indicates a 76.6% improvement compared with that of SC without PSS (0.77%).
© 2013 IEEE
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