A new level shifter circuit suitable for implementation using n-channel
oxide thin-film transistors (TFTs) is reported. This level shifter is designed
to convert a single 10 V input signal into a 20 V output signal. In order
to raise the output voltage up to <i>V</i><sub>DD</sub> in spite of the large zero-<i>V</i><sub>GS</sub> current of the oxide TFT,
negative <i>V</i><sub>GS</sub> is applied to the pull-down TFTs. Simulation and fabrication results
show that the level shifter operates correctly with oxide TFTs and that the
power consumption is as low as 0.2 mW at an input signal frequency of 10 kHz.
© 2013 IEEE
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