Abstract
Interdiffused InGaN quantum wells (QWs) with various interdiffusion lengths
(L<sub>d)</sub> are comprehensively studied as the improved active region for
Light-Emitting Diodes (LEDs) emitting in the blue and green spectral regime. The
electron-hole wavefunction overlap (Γ<sub>e_hh</sub>), spontaneous emission
spectra, and spontaneous emission radiative recombination rate (R<sub>sp</sub>) for
the interdiffused InGaN QWs are calculated and compared to that of the conventional
InGaN QWs emitting in the similar wavelengths. The calculations of band structure,
confined energy levels, electron and hole wavefunctions, and spontaneous emission
radiative recombination rate (R<sub>sp</sub>) are based on the self-consistent
6-band k ⋅ p method, taking into account the valence band mixing, strain effect,
spontaneous and piezoelectric polarizations and carrier screening effect. Studies
indicate a significant enhancement of the electron-hole wavefunction overlap
(Γ<sub>e_hh</sub>) and the spontaneous emission radiative recombination rate
(R<sub>sp</sub>) for the interdiffused InGaN QWs. The improved performance for the
interdiffused InGaN QWs is due to the modification of the band lineups at the InGaN-GaN
interfaces, which leads to the enhancement of the electron-hole wavefunction overlap
significantly.
© 2013 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy