Abstract
In this paper, we minimized efficiency droop by varying barrier thickness for
InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The
external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs
improved by 18% at a current density of 200 A ⋅ cm<sup>-2</sup> , compared
to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier
distribution resulting from the presence of NQBs was practically approved from another
experimental design in this study. We suggest that the NQBs displayed uniform carrier
distribution in active layer and decreased the carrier density in the active layer at a
critical current density.
© 2012 IEEE
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