Abstract
In this work, wafer level TLP testing is applied to amorphous indium–gallium–zinc–oxide
(a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic
discharge (ESD) robustness. Two kinds of TFTs with
${{N}}_{2}{{O}}$
and
${{O}}_{2}$
treatments
are subject to the ESD test. It is found that the contact resistance of the
TFTs, instead of the channel quality, dominates the ESD power for them to
be damaged.
© 2013 IEEE
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