Abstract

This paper describes the design, fabrication, and record performance of a new class of ultra-wideband wavelength tuning, ultra-low noise semiconductor laser, the Integrated Coherent Tunable Laser (ICTL). The ICTL device is designed for, and fabricated in, a CMOS foundry based Silicon Photonics platform, utilizing heterogeneous integration of III-V material to create the integrated gain section of the laser–enabling high-volume mass-market manufacturing at low cost and with high reliability. The ICTL incorporates three or more ultra-low loss micro-ring resonators, with large ring size, in a Sagnac loop reflector geometry, creating exceptional laser reflector performance, plus an extended laser cavity length that enables highly-coherent output; ultra-low linewidth and phase noise. This paper describes record integrated laser performance; 118 nm wavelength tuning, covering S-, C- and L-bands, with Lorentzian linewidth <100 Hz, and with excellent relative intensity noise (RIN) of ≤ −155 dBc/Hz. The remarkable performance of the ICTL device, coupled with the high volume/low cost capability of the Silicon Photonics platform enables next-generation applications including ultra-wideband WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive FMCW LiDAR systems utilizing wavelength scanning.

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