Abstract
Comparing with a lumped electroabsorption modulator (EAM), we show
the merits of a long EAM with traveling-wave electrode with high
radio-frequency (RF) gain that could be used in high-frequency analog
application. By terminating the RF output port with the characteristic
impedance of 30 Omega, the device exhibited a large enhancement of 6 dB
above 10 GHz in the electrical-to-optical response and a wide fractional
bandwidth as estimated from simulation. In addition, an input impedance
matching circuit of stub embedded on the device chip was found to be very
effective for improving RF characteristics in the narrow band of
frequency.
© 2003 IEEE
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