Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 24,
  • Issue 3,
  • pp. 1425-
  • (2006)

Polarization Conversion in Passive Deep-Etched GaAs/AlGaAs Waveguides

Not Accessible

Your library or personal account may give you access

Abstract

Experimental results are presented to demonstrate polarization conversion in passive deep-etched gallium arsenide waveguides. The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitative agreement with vector finite element method (VFEM) simulations is shown. A coupled-mode formulation is used to describe the behavior. The results are compared with an elliptical-polarization analysis, obtained from measurements of the polarization angles of the fundamental waveguide modes and the difference between their effective indices. A novel technique used to carry out effective-index-difference measurements is reported.

© 2006 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved