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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 26,
  • Issue 11,
  • pp. 1387-1395
  • (2008)

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

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Abstract

We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs $({< 1}~{\hbox {ML}})$ and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs–InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.

© 2008 IEEE

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