Abstract
We report on interplay of epitaxial growth phenomena and device performance
in quantum dot (QD) and quantum wire (QWW) lasers based on self-organized
nanostructutres. InAs QDs are the most explored model system for basic understanding
of “near-ideal” QD devices. Vertically-coupled growth of QDs and
activated phase separation allow ultimate QD wavefunction engineering enabling
GaAs lasers beyond 1400 nm and polarization-insensitive optical amplification.
A feasibility of QD semiconductor optical amplifiers at terabit frequencies
using InAs QDs is manifested at 1300 and 1500nm. 1250–1300nm QD GaAs
edge emitters and VCSELs operate beyond 10Gb/s with ultimate temperature robustness.
Furthermore, temperature-insensitive operation without current or modulation
voltage adjustment at $>$20
Gb/s is demonstrated up to ${\sim} \hbox{90}\,
^{\circ}$C. Light-emitting devices based on InGaN-QDs cover
ultraviolet (UV) and visible blue-green spectral ranges. In these applications,
InN-rich nanodomains prevent diffusion of nonequilibrium carries towards crystal
defects and result in advanced degradation robustness of the devices. All
the features characteristic to QDs are unambiguously confirmed for InGaN structures.
For the red spectral range InGaAlP lasers are used. Growth on misoriented
surfaces, characteristic to these devices, leads to nano-periodically-step-bunched
epitaxial surfaces resulting in two principal effects: 1) step-bunch-assisted
alloy phase separation, leading to a spontaneous formation of ordered natural
superlattices; 2)formation of quantum wire-like structures in the active region
of the device. A high degree of polarization is revealed in the luminescence
recorded from the top surface of the structures, in agreement with the QWW
nature of the gain medium. QD and QWW lasers are remaining at the frontier
of the modern optoelectronics penetrating into the mainstream applications
in key industries.
© 2008 IEEE
PDF Article
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