Abstract
Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL)
with two Ta$_{2}$O$_{5}$/SiO$_{2}$ dielectric distributed
Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct
deposition of the top DBR onto the GaN surface exposed after substrate removal
and no use of etching and polishing processes. Blue-violet lasing action was
observed at a wavelength of 397.3 nm under optical pumping at room temperature
with a threshold pumping energy density of about 71.5mJ/cm$^{2}$. The laser action
was further confirmed by a narrow emission linewidth of 0.13 nm and a degree
of polarization of about 65%. The result suggests that practical blue-violet
GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique
for substrate removal.
© 2009 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy