Abstract
High-index contrast silicon-on-insulator technology enables wavelength-scale
compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator
using complementary metal-oxide-semiconductor processing technology. By switching
from advanced optical lithography at 248 to 193 nm, combined with improved
dry etching, a substantial improvement in process window, linearity, and proximity
effect is achieved. With the developed fabrication process, propagation and
bending loss of photonic wires were characterized. Measurements indicate a
propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending
loss of 0.013 dB/90$^{\circ}$ bend of 5-$\mu
$m radius. Through this paper, we demonstrate the suitability
of high resolution optical lithography and dry etch processes for mass production
of photonic integrated circuits.
© 2009 IEEE
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