Abstract
Simple quasi-equilibrium model for quantum dash (QDash) active material is
derived for closely spaced energy states. The model is used to study the
differential gain of Qdash for different key parameters. Expressions for the
electron and the hole occupation probabilities as a function of electron
concentration are derived. The derived analytical model shows excellent
agreement with numerical simulation. The differential gain of Qdash active
layer is calculated for different doping concentration and different
electron energy separation between adjacent states. We find that when the
electron energy states are widely separated, the differential gain can be
slightly enhanced at low-energy detuning by doping the dashes by p-type
doing. On the other hand, our calculations reveal that when the electron
energy states are close to each other, doping the dashes by either n-type or
p-type concentration will not enhance the differential gain.
© 2010 IEEE
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