Abstract
Submicron etched beam splitters are designed, fabricated and characterized
in Al$_{0.9}$Ga$_{0.1}$As–GaAs waveguides. Beam splitter transmission and
reflection characteristics show clear dependence on gap dimension and angle
of incidence. It is possible to obtain 8 to 30% power transmission by
adjusting the gap dimension and angle of incidence. The experimental results
agree well with three-dimensional (3-D) finite difference time domain (FDTD)
simulations. The effect of imperfections, mainly the slope of etched
sidewalls and variations in etch depth are investigated using 3-D FDTD.
Design guidelines for low loss etched beam splitters are also given.
© 2010 IEEE
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