Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 29,
  • Issue 22,
  • pp. 3421-3427
  • (2011)

Theoretical and Experimental Study of a Semiconductor Resonant Cavity Linear Interferometric Intensity Modulator

Not Accessible

Your library or personal account may give you access

Abstract

The phase response of an injection locked semiconductor laser that is used as the phase modulator in a resonant cavity linear interferometric intensity modulator is studied in detail. It is shown that, signal-to-intermodulation ratio of such a modulator is affected by the injection ratio, linewidth enhancement factor of the semiconductor laser, residual amplitude modulation, depth of phase modulation, and linearity of the resonant cavity response. Experimental measurements of the signal-to-intermodulation ratio of this modulator using a semiconductor Fabry-Pérot laser as the resonant cavity are in good agreement with the theoretically predicted values.

© 2011 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved