Abstract
We present a comprehensive modeling study of a high-speed gallium arsenide
electro-optic modulator with ultralow switching voltages and large modulation bandwidths
enabled by transparent conducting (TC) electrodes. The driving voltage, optical
insertion loss, and modulation bandwidth of the TC-enabled modulator are systematically
analyzed. Optimized designs for both a top-down and a side conduction geometry using
Ta<sub>2</sub>O<sub>5</sub> as both buffer and side cladding layers are presented. The results
predict half-wave voltages from 0.5 down to 0.2 V, optical insertion losses of 6–10 dB,
and optical 3 dB modulation bandwidths from 25–50 GHz for a top-down conduction geometry
and 15–30 GHz for a side conduction geometry, assuming that proper impedance
transforming parts and terminations are used. The use of benzocyclobutane as side
cladding layers in the top-down conduction geometry to realize direct impedance matching
was also explored. The corresponding modulation bandwidths are 13 GHz for 0.5 V case and
6 GHz for 0.2 V case, mainly limited by RF–optical wave velocity mismatch.
© 2012 IEEE
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