Abstract
A prototypical design of AlGaN deep ultraviolet (DUV) laser diodes (LDs) on AlN
substrates employing tapered electron blocking layer is presented. Two-dimensional
optoelectronic simulation predicts lasing at a target wavelength of 250 nm. Degradation
of optical gain associated with spatial separation of electron and hole wave functions
inside the active region may be considerably reduced in designs featuring quaternary
AlInGaN barriers, by virtue of polarization charge matching. A systematic method for
selection of polarization-free quaternary barrier compositions is proposed for 250 nm
DUV LD designs, accompanied by a sensitivity analysis. The selection procedure presented
here is readily applied to LDs and light-emitting diodes operating at other
wavelengths.
© 2012 IEEE
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