Abstract
The detailed dynamic analysis of novel high-speed InP-based photodiodes (PDs) has been performed. Such device can sustain an invariable high external efficiency (∼74%; no antireflection coating) across a wide optical operation window (0.85 to 1.55 μm). Furthermore, compared with the traditional GaAs-based high-speed PD for optical interconnect applications, our proposed device structure can offer an enlarged device active diameter and eliminate the degradation in responsivity performance when the desired speed performance is increased. This is because the strong photoabsorption process and the elimination of slow hole drift in the In0.53Ga0.47As based collector layer at 0.85-μm wavelength operation. By measuring the dynamic performance of PDs with different active diameters across such wide optical window, we can accurately extract the electron drift-velocity under different wavelengths excitations in the In0.53Ga0.47As collector layer. This result indicates that at short-wavelength (0.85 μm) operation, the photogenerated electron in the In0.53Ga0.47As collector suffers from significant intervalley scattering effect due to its high excess energy. By using such device with diameter of optical window as large as 40 μm, 40 Gbit/s error-free transmissions have been successfully demonstrated through 5-km single-mode (SMF-28) and 0.1-km multimode (OM4) fibers at long- and short-wavelengths operations with reasonable sensitivity, respectively.
© 2014 IEEE
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