Abstract

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

Ming-Yang Hsu, Gray Lin, and Chien-Hung Pan
Opt. Express 25(26) 32697-32704 (2017)

Threshold current temperature dependence of quantum-dot photonic crystal surface-emitting lasers with respect to gain-cavity detuning

Ming-Yang Hsu, Gray Lin, Zong-Lin Li, and Po-Chou Pan
Opt. Express 26(10) 13483-13488 (2018)

Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate

Katsuaki Tanabe, Masahiro Nomura, Denis Guimard, Satoshi Iwamoto, and Yasuhiko Arakawa
Opt. Express 17(9) 7036-7042 (2009)

GaSb-based mid infrared photonic crystal surface emitting lasers

Chien Hung Pan, Chien Hung Lin, Ting Yuan Chang, Tien Chang Lu, and Chien Ping Lee
Opt. Express 23(9) 11741-11747 (2015)

Edge-emitting photonic crystal double-heterostructure nanocavity lasers with InAs quantum dot active material

Tian Yang, Adam Mock, John D. O'Brien, Samuel Lipson, and Dennis G. Deppe
Opt. Lett. 32(9) 1153-1155 (2007)