Abstract
A photoreceiver consisting of indium phosphide (InP) balanced photodiodes (PD) on Si
$_3$
N
$_4$
waveguides and a transimpedance amplifier (TIA) fabricated in a silicon germanium (SiGe) BiCMOS process is demonstrated. The InP PDs, heterogeneously integrated on a silicon substrate, achieve external (internal) responsivities of 0.75 (0.9) A/W, bandwidths of 4 GHz, and common mode rejection ratios (CMRR) of greater than 40 dB when illuminated differentially. The TIA achieves 74 dB
$\bf \Omega$
of transimpedance gain with a 1 dB peak, a bandwidth of 3 GHz, and a low equivalent input noise current density of 7.2 pA/
$\sqrt{Hz}$
when loaded with a C
$_{PD}$
of 380 fF. The full photoreceiver achieves high conversion gain of more than 2 kV/W up through 2 GHz, and a low NEP of 8 pW/
$\sqrt{Hz}$
up through 1.6 GHz. The photoreceiver optical CMRR is measured to be 36 dB.
PDF Article
More Like This
Co-design of a differential transimpedance amplifier and balanced photodetector for a sub-pJ/bit silicon photonics receiver
Ke Li, Shenghao Liu, Xiaoke Ruan, Dave J. Thomson, Yang Hong, Fan Yang, Lei Zhang, Cosimo Lacava, Fanfan Meng, Weiwei Zhang, Periklis Petropoulos, Fan Zhang, and Graham T. Reed
Opt. Express 28(9) 14038-14054 (2020)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy