Abstract
We analyze theoretically the feasibility of what we believe to be a novel two-dimensional SiGe/Si strained-layer waveguide. The new geometry can be grown by selective epitaxy and has loosened cutoff and critical-thickness restrictions. This geometry could be applied for waveguide-active devices such as LED’s, photodetectors, and modulators. Owing to the high cross section of the guided mode, these devices could be easily interfaced in practice with optical fibers.
© 1999 Optical Society of America
Full Article | PDF ArticleMore Like This
Younghyun Kim, Masafumi Yokoyama, Noriyuki Taoka, Mitsuru Takenaka, and Shinichi Takagi
Opt. Express 21(17) 19615-19623 (2013)
Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Jean-René Coudevylle, David Bouville, Diego Perez-Galacho, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini
Opt. Express 23(24) 30821-30826 (2015)
Elizabeth H. Edwards, Leon Lever, Edward T. Fei, Theodore I. Kamins, Zoran Ikonic, James S. Harris, Robert W. Kelsall, and David A. B. Miller
Opt. Express 21(1) 867-876 (2013)