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Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions

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Abstract

CdSe is used as a prototype to show the implications of valence-band degeneracy for the optical properties of strongly quantum-confined nanocrystals. Absorption spectra and photoluminescence spectra obtained under intermediate and strong pulsed excitation show the presence of new structures. The energy levels for the electron and the hole are calculated with the spherical confinement, the nonparabolicity of the conduction band, and the valence band degeneracy taken into account. The oscillator strengths of the dipole-allowed transitions are also calculated. This model is found to be in good agreement with the experimental observations, which originate mainly from the quantization of the energy spectrum of holes with due account given to valence-band degeneracy.

© 1993 Optical Society of America

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Corrections

A. I. Ekimov, F. Hache, M. C. Schanne-Klein, D. Ricard, C. Flytzanis, I. A. Kudryavtsev, T. V. Yazeva, A. V. Rodina, and Al. L. Efros, "Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions: erratum," J. Opt. Soc. Am. B 11, 524-524 (1994)
https://opg.optica.org/josab/abstract.cfm?uri=josab-11-3-524

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