Abstract

Damage thresholds at 2 μm exceeding 10 J/cm² were measured in ZnGeP₂ witness samples representing a range of growth runs and surface treatments. Samples grown more recently were more robust, but clear correlations between damage properties and surface quality, coating type, or incident polarization were not observed. Variation in damage threshold both within individual samples and between samples was quite large. Comparison with uncoated diffusion-bonded and single-wafer GaAs shows that uncoated ZnGeP₂ damages at slightly lower energy density than does GaAs (approximately 4 J/cm² versus 5.5 J/cm², respectively).

© 1995 Optical Society of America

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