Abstract

Simultaneous measurements of the photorefractive and the absorptive grating gain components in GaAs:EL2 are made and are shown to display qualitative behavior consistent with linearized solutions of a two-carrier rate equation model. These two components, together with the linear absorption coefficient, permit determination of four independent material parameters, e.g., the ionized and the nonionized EL2 densities, the hole photoionization cross section (σ_h), and the electro-optic coefficient (r₄₁). Data obtained at optical wavelengths of 0.96 and 1.06 µm indicate that σ_h and r₄₁ are larger than published values.

© 1996 Optical Society of America

Contribution of nonlinear absorption and elasto-optic effect in photorefractive grating recording in GaAs

K. Shcherbin, S. Odoulov, R. Litvinov, E. Shandarov, and S. Shandarov
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Absorption gratings in photorefractive crystals with multiple levels

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J. Opt. Soc. Am. B 9(8) 1407-1415 (1992)

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