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Phonon-induced spectral holes in the gain region of an inverted semiconductor

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Abstract

Spectral-hole-burning experiments are performed in the gain region of an inverted semiconductor multiple quantum well. We find not only a spectral hole at the pump-pulse frequency but also replicas at higher frequencies. These replicas are qualitatively explained in terms of carrier–phonon interactions in which high-energy carriers relax into the optically induced spectral hole by LO-phonon emission.

© 1996 Optical Society of America

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