Abstract

The dynamic behavior of the complementary space-charge gratings formed in a ${\mathrm{Bi}}_{12}{\mathrm{SiO}}_{20}$ crystal through prolonged recording at 780 nm is used to determine a number of significant photorefractive parameters, including effective trap density, diffusion length, and dielectric relaxation time, simultaneously for both types of charge carriers. This simple, all-optical method does not require prior knowledge of any other photorefractive parameters and therefore represents the only procedure currently available capable of direct materials evaluation in the low-coupling regime. Furthermore, the scheme provides the means for quantitatively assessing the effects of crystal sensitization resulting, for example, from uniform preillumination.

© 1998 Optical Society of America

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