Abstract

The combination of atomic-force and scanning-near-field optical microscopies is useful for characterizing the physical and optical parameters of optoelectronic devices. With a commercial atomic-force microscope adapted to perform scanning-near-field optical measurements, we succeed in determining core diameters, localizing the erbium doping zone, and analyzing propagation modes in erbium-doped and multimodal optical fibers.

© 2000 Optical Society of America

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