Abstract

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.

© 2004 Optical Society of America

Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors

D. Grischkowsky, Søren Keiding, Martin van Exter, and Ch. Fattinger
J. Opt. Soc. Am. B 7(10) 2006-2015 (1990)

Terahertz time-domain spectroscopy of submonolayer water adsorption in hydrophilic silica aerogel

Jiangquan Zhang and Daniel Grischkowsky
Opt. Lett. 29(9) 1031-1033 (2004)

Waveguide terahertz time-domain spectroscopy of nanometer water layers

Jiangquan Zhang and D. Grischkowsky
Opt. Lett. 29(14) 1617-1619 (2004)

Terahertz dielectric properties of polystyrene foam

Guozhong Zhao, Maarten ter Mors, Tom Wenckebach, and Paul C. M. Planken
J. Opt. Soc. Am. B 19(6) 1476-1479 (2002)

Influence of noise on the characterization of materials by terahertz time-domain spectroscopy

Lionel Duvillaret, Frédéric Garet, and Jean-Louis Coutaz
J. Opt. Soc. Am. B 17(3) 452-461 (2000)