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Tailoring of infrared photorefractive properties of Sn 2 P 2 S 6 crystals by Te and Sb doping

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Abstract

The photorefractive properties of Sn2P2S6 crystals doped with Te and Sb in the near-infrared wavelength range up to 1064nm are reported. The main photorefractive parameters, i.e., two-wave mixing gain, effective electro-optic coefficient, diffusion length, concentration of traps, and response time, are compared with conventional nominally pure Sn2P2S6. Te-doped Sn2P2S6 shows the fastest response with the smallest decrease of the photorefractive efficiency with increasing wavelength in the near infrared. Sb doping, on the other hand, inhibits photorefraction in the near infrared. Sn2P2S6:Te and Sn2P2S6:Sb crystals both show a high two-wave mixing gain Γ at 633nm, and 10 and 20cm1. Te-doped Sn2P2S6 shows a photorefractive gain of 4.5cm1 at 1064nm. Response times at 1064nm of 20ms have been measured for the intensity 6Wcm2, which is 2 orders of magnitude shorter than in Rh-doped BaTiO3.

© 2007 Optical Society of America

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