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Experimental characterization of high-speed 1.55 μ m buried heterostructure In Ga As P In Ga Al As quantum-well lasers

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Abstract

Detailed experimental characterization is performed for 1550nm semi-insulating regrown buried heterostructure Fabry–Perot (FP) lasers having 20 InGaAsPInGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency ηd, background optical loss αi, K-factor, D-factor, characteristic temperature T0, differential gain dgdn, gain-compression factor ϵ, carrier density versus current, differential carrier lifetime τd, optical gain spectrum below threshold, and chirp parameter α are extracted from these measurements. The FP lasers exhibited a high T0 (7886.5°C) and very high-resonance frequency (23.7GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for uncooled high-speed direct-modulated laser applications.

© 2009 Optical Society of America

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