Abstract

We report a hybrid organic light-emitting device (HOLED) with an inorganic hole transport layer (HTL) of silicon-rich silicon oxide (${\mathrm{Si}}_{1+x}{\mathrm{O}}_2$), whose mobility can be tunable by changing the degree of excess silicon x. The structure of the HOLED is designed as indium tin oxide/ ${\mathrm{Si}}_{1+x}{\mathrm{O}}_2$ ($30\hspace{0.17em}\mathrm{nm}$)/ buffer/ AlQ ($45\hspace{0.17em}\mathrm{nm}$)/ Bphen:${\mathrm{Cs}}_2\mathrm{C}{\mathrm{O}}_3$ ($15\hspace{0.17em}\mathrm{nm}$)/ Sm ($5\hspace{0.17em}\mathrm{nm}$)/ Au ($15\hspace{0.17em}\mathrm{nm}$). When x is equal to 3.7, the corresponding mobility of ${\mathrm{Si}}_{1+x}{\mathrm{O}}_2$ is about $3.3\times {10}^{-5}{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$, which is close to that of AlQ, and this HOLED has achieved a maximum current efficiency of $3.6\mathrm{cd}/\mathrm{A}$ at $\sim 20\mathrm{mA}/{\mathrm{cm}}^2$, which is even higher than that of the typical organic light-emitting device having NPB as an HTL.

© 2010 Optical Society of America

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