Abstract
In this paper, we theoretically demonstrate that carrier recovery can be accelerated through the tunneling effect in a novel (to our knowledge) quantum well (QW) semiconductor optical amplifier. In the active region, we design the repeated element, including a shallow QW and a following deep QW. Through numerical calculation, we find this novel structure is helpful for improving the dynamic characteristics. In the single element, the shallow QW acts as a perfect carrier reservoir, while the deep QW acts as a “real” active region. Gain recovery time is shortened significantly.
© 2012 Optical Society of America
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