The radiative excitonic recombination coefficient Bx in semiconductors for the process e + h → X* + photon is calculated. Electrons and holes are considered in a parabolic-band approximation. The exciton’s internal state is taken as hydrogenic. The exciton’s center-of-mass energy spectrum is found to be modified Maxwellian with a sharper tail at low energies. Numerical calculations are presented for gallium arsenide. The value of Bx is about 3 × 10−9 cm3 sec−1 at 45 K. Bx decreases rapidly with increasing temperature and approaches the value of 3 × 10−10 cm3 sec−1 at temperatures when excitons are unstable against thermal decomposition, which is comparable with a direct radiative recombination coefficient at room temperature. The possibility for a stimulated recombination process is also discussed.
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