GaInAsP/InP-based optical modulator consisting of gap-surface-plasmon-polariton waveguide: theoretical analysis

Tomohiro Amemiya; Eijun Murai; Zhichen Gu; Nobuhiko Nishiyama; Shigehisa Arai

doi:10.1364/JOSAB.31.002908

Journal of the Optical Society of America B
Vol. 31,
Issue 11,
pp. 2908-2913
(2014)
•https://doi.org/10.1364/JOSAB.31.002908

GaInAsP/InP-based optical modulator consisting of gap-surface-plasmon-polariton waveguide: theoretical analysis

Tomohiro Amemiya, Eijun Murai, Zhichen Gu, Nobuhiko Nishiyama, and Shigehisa Arai

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Tomohiro Amemiya, Eijun Murai, Zhichen Gu, Nobuhiko Nishiyama, and Shigehisa Arai, "GaInAsP/InP-based optical modulator consisting of gap-surface-plasmon-polariton waveguide: theoretical analysis," J. Opt. Soc. Am. B 31, 2908-2913 (2014)

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Abstract

We propose a III–V-based electro-absorption plasmon modulator that can be used to construct fully monolithic plasmonic integrated circuits. Our device consists of a GaInAsP/InP gap-surface-plasmon-polariton waveguide with ${TiO}_{2} / ITO$ layers on both sides of the InGaAsP core. Using this design, the intensity of transmitted light can be modulated by controlling the carrier concentration of the ITO layer, as a positive gate voltage induces electron accumulation in the ITO layer (this is similar to the operation of FinFETs). The extinction ratio was $4.5 dB / μm$ with a gate voltage swing of 0–5, and the insertion loss was found to be $1.5 dB / μm$ . The figure of merit (ratio of extinction ratio to transmission loss) is 3, a result that is far superior to other conventional Si-based plasmonic photomodulators.

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Material Parameters
Parameter	Symbol	Value
Electron mass (degenerately doped ITO thin film)	$m_{0}^{*}$	0.4
Fitting parameter (ITO thin film)	$P$	$0.18 {eV}^{- 1}$
Electron mobility at optical frequencies (ITO thin film)	$μ_{opt}$	$25 {cm}^{2} / Vs$
Relative permittivity at optical frequencies (ITO thin film)	$ε_{\infty}$	3.8
Refractive indices of the III–V compound semiconductor	—	InP: 3.17 GaInAsP: 3.38
Refractive index of ${TiO}_{2}$	—	2.2
Refractive index of gold (Au)	—	$0.145 + 10 j$
Structure Parameters
Parameter	Symbol	Value
Height of InP top/bottom layer	$h_{top / bottom}$	400 nm
Width of InP top/bottom layer	$W_{top / bottom}$	500 nm
Height of GaInAsP core layer	$h_{core}$	200 nm
Width of GaInAsP core layer	$W_{core}$	Variable
Thickness of ${TiO}_{2}$ insulator	$t$	Variable
Thickness of ITO thin film	$g$	Variable

Group	UC Berkeley^a	Karlsruhe Institute of Technology^a	This Work
Papers	[24]	[13,23]	This Work
Material	ITO/silicon	ITO/silicon	ITO/GaInAsP/InP
Extinction ratio (ER)	$0.8 dB / μm$	$2.2 dB / μm$	$4.2 dB / μm$
Off-state propagation loss ( $α$ )	$- 1.0 dB / μm$	$- 8.6 dB / μm$	$- 1.3 dB / μm$
Figure of merit ( $ER / α$ )	0.8	0.25	3.23
Polarization state	TM	TM	TE

Material Parameters
Parameter	Symbol	Value
Electron mass (degenerately doped ITO thin film)	$m_{0}^{*}$	0.4
Fitting parameter (ITO thin film)	$P$	$0.18 {eV}^{- 1}$
Electron mobility at optical frequencies (ITO thin film)	$μ_{opt}$	$25 {cm}^{2} / Vs$
Relative permittivity at optical frequencies (ITO thin film)	$ε_{\infty}$	3.8
Refractive indices of the III–V compound semiconductor	—	InP: 3.17 GaInAsP: 3.38
Refractive index of ${TiO}_{2}$	—	2.2
Refractive index of gold (Au)	—	$0.145 + 10 j$
Structure Parameters
Parameter	Symbol	Value
Height of InP top/bottom layer	$h_{top / bottom}$	400 nm
Width of InP top/bottom layer	$W_{top / bottom}$	500 nm
Height of GaInAsP core layer	$h_{core}$	200 nm
Width of GaInAsP core layer	$W_{core}$	Variable
Thickness of ${TiO}_{2}$ insulator	$t$	Variable
Thickness of ITO thin film	$g$	Variable

Group	UC Berkeley^a	Karlsruhe Institute of Technology^a	This Work
Papers	[24]	[13,23]	This Work
Material	ITO/silicon	ITO/silicon	ITO/GaInAsP/InP
Extinction ratio (ER)	$0.8 dB / μm$	$2.2 dB / μm$	$4.2 dB / μm$
Off-state propagation loss ( $α$ )	$- 1.0 dB / μm$	$- 8.6 dB / μm$	$- 1.3 dB / μm$
Figure of merit ( $ER / α$ )	0.8	0.25	3.23
Polarization state	TM	TM	TE

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Journal of the Optical Society of America B