Femtosecond mid-IR difference-frequency generation in HgGa<sub>2</sub>S<sub>4</sub> from an 80 MHz optical parametric oscillator pumped at 800 nm

Marcus Beutler; Ingo Rimke; Edlef Büttner; Valeriy Badikov; Valentin Petrov

doi:10.1364/JOSAB.33.0000D7

Journal of the Optical Society of America B
Vol. 33,
Issue 11,
pp. D7-D11
(2016)
•https://doi.org/10.1364/JOSAB.33.0000D7

Femtosecond mid-IR difference-frequency generation in HgGa₂S₄ from an 80 MHz optical parametric oscillator pumped at 800 nm

Marcus Beutler, Ingo Rimke, Edlef Büttner, Valeriy Badikov, and Valentin Petrov

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Marcus Beutler, Ingo Rimke, Edlef Büttner, Valeriy Badikov, and Valentin Petrov, "Femtosecond mid-IR difference-frequency generation in HgGa₂S₄ from an 80 MHz optical parametric oscillator pumped at 800 nm," J. Opt. Soc. Am. B 33, D7-D11 (2016)

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Abstract

We employ ${HgGa}_{2} S_{4}$ for difference-frequency generation between signal and idler of a synchronously pumped femtosecond optical parametric oscillator at a repetition rate of 80 MHz achieving continuous tuning from $\sim 4 μm$ (33 mW) to $\sim 12 μm$ ( $> 0.5 mW$ ) and pulse durations of $\sim 220 fs$ .

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Crystal Type, $θ {(ϕ)}_{cut}$	Crystal Length [mm]	Repetition Rate [MHz]	DFG Wavelength $λ_{1}$ [μm]	Idler Energy at Wavelength	Pulse Duration [fs]	Ref.
AGS-I, 40°	1	82	2.5–5.5	$\sim 6 pJ$ at 4.03 μm	200	[4]
AGS-I, 50°	2	80	2.6–5.3	5 pJ at 3.4 μm	400 (est.)	[5]
AGS-I, 33°	2	76	5.2–14.5 ^a	17.1 pJ at 8.5 μm	250 (est.)	[6]
GaSe-I, 0°	1		5.2–18 ^a	26.3 pJ at 8.5 μm	300 (est.)
AGSe-II, 66°	1	84	8–18	12 fJ at 10–18 μm	310	[7]
GaSSe-I, 0°	1.6	80	4–12	70 pJ at 7.2 μm	200	[8]
LISe-II, 35°	4		4–11.5	130 pJ at 7.2 μm	410	[9]
HGS-II, 46°	2	80	4–12	246 pJ at 7.2 μm	220	present work
AGS-II, 42°	2		4–11	50 pJ at 7.2 μm	215
AGSe-I, 57°	2		$> 7 - 13$	161 pJ at 7.2 μm	340

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