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Enhanced responsivity of co-hyperdoped silicon photodetectors fabricated by femtosecond laser irradiation in a mixed SF6/NF3 atmosphere

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Abstract

Co-hyperdoped silicon is fabricated on single crystalline Si substrate by using femtosecond-laser pulses in a mixed gas of ${{\rm SF}_6}$ and ${{\rm NF}_3}$ with different ratios. With the increase of the proportion of ${{\rm NF}_3}$ in the mixed gas, the co-hyperdoped silicon shows increased crystallinity but decreased sub-bandgap absorption. Photodetectors are fabricated based on these samples without high-temperature thermal annealing. With the increase of the proportion of ${{\rm NF}_3}$, the photoelectric response first increases and then decreases. Photodetectors based on the co-hyperdoped (${{\rm NF}_3}/{{\rm SF}_6}$, 35/35 kPa) material without high-temperature thermal annealing demonstrate high performance on photoresponsivity (${6}\;{\rm A}\;{{\rm W}^{ - 1}}@{ - 5}\;{\rm V}$ for 1050 nm), which is an order of magnitude higher compared with the photodetector made from S-hyperdoped silicon. The photoconductive gain accounts for the high responsivity.

© 2020 Optical Society of America

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