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Quantum interference near bismuth-chalcogenide microstructures

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Abstract

In this work, we show that the quantum interference between two spontaneous emission channels can be greatly enhanced when a three-level V-type quantum emitter is placed near the bismuth chalcogenide (${{\rm Bi}_2}{{\rm Te}_3}$). Namely, we calculated the degree of quantum interference for quantum emitters placed in the vicinity of a planar surface of a ${{\rm Bi}_2}{{\rm Te}_3}$ slab, as well as near a ${{\rm Bi}_2}{{\rm Te}_3}$ microsphere. We found, in particular, that the degree of quantum interference assumes very high values, for both geometries, which is a result of the strong dependence of the spontaneous emission rate on the orientation of a quantum-emitter dipole relative to the ${{\rm Bi}_2}{{\rm Te}_3}$ surface, at the frequencies of polaritonic-type excitations. These particular high values of quantum interference can trigger a variety of phenomena associated with quantum interference of spontaneous-emission channels, such as lasing without inversion, coherent populations trapping, transparency, nonlinearities, and so forth.

© 2021 Optical Society of America

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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