Highly efficient SiO<sub>2</sub> trapezoidal grating-based thin-film solar cell

Asmaa Mohamed A. Aly; Mohamed Hussein; Mohamed Hussein; Mohamed Hussein; Ashraf Yahia; Mohamed Farhat O. Hameed; Mohamed Farhat O. Hameed; Mohamed Farhat O. Hameed; Mohamed Farhat O. Hameed; S. S. A. Obayya

doi:10.1364/JOSAB.414777

Journal of the Optical Society of America B
Vol. 38,
Issue 3,
pp. 922-931
(2021)
•https://doi.org/10.1364/JOSAB.414777

Highly efficient SiO₂ trapezoidal grating-based thin-film solar cell

Asmaa Mohamed A. Aly, Mohamed Hussein, Ashraf Yahia, Mohamed Farhat O. Hameed, and S. S. A. Obayya

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Asmaa Mohamed A. Aly, Mohamed Hussein, Ashraf Yahia, Mohamed Farhat O. Hameed, and S. S. A. Obayya, "Highly efficient SiO₂ trapezoidal grating-based thin-film solar cell," J. Opt. Soc. Am. B 38, 922-931 (2021)

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Abstract

A crystalline silicon thin-film solar cell (c-Si TFSC) with a trapezoidal grating is newly introduced and analyzed. The three-dimensional (3D) finite-difference time-domain (FDTD) method is employed to optimize the geometrical parameters of the trapezoidal grating and hence maximize the light absorption. The proposed trapezoidal grating TFSC offers an optical ultimate efficiency ($\eta$) of 32.3%, with an enhancement of 81% relative to the conventional TFSC. The light absorption enhancement within wavelength range (300–1100 nm) is based on the diffraction grating, which supports Bloch modes through the suggested solar cell. The electrical characteristics of the proposed design are also studied using the finite-element method. The cell doping concentration, junction thickness, and recombination process are also investigated to further enhance the power conversion efficiency (PCE). The reported design offers a short circuit current density ${J_{{\rm sc}}}$ of ${24.8}\;{{\rm mA/cm}^2}$ and PCE of 12.5% with an improvement of 83% over the conventional TFSC.

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	Top Surface		Bottom Surface
Height ( $h$ )	Width ( $w_{1}$ )	Length ( $ι_{1}$ )	Width ( $w_{2}$ )	Length ( $ι_{2}$ )	$T_{A Z O}$	Period ( $Λ$ )
100 nm	100 nm	160 nm	340 nm	500 nm	70 nm	500 nm

	Top Surface		Bottom Surface
Height ( $h$ )	Width ( $w_{1}$ )	Length ( $ι_{1}$ )	Width ( $w_{2}$ )	Length ( $ι_{2}$ )	$T_{A Z O}$	Period ( $Λ$ )
160 nm	50 nm	235 nm	445 nm	500 nm	70 nm	500 nm

Parameters	Description	Value [43]
$μ_{p}$	hole mobility	$450 {c m}^{2} / V \cdot s$
$μ_{n}$	electron mobility	$1400 {c m}^{2} / V \cdot s$
$N_{a}$	acceptor concentration (p-doping)	$1 \times 10^{17}$ to $1 \times 10^{20} {c m}^{- 3}$
$N_{d}$	donor concentration (n-doping)	$1 \times 10^{17}$ to $1 \times 10^{20} {c m}^{- 3}$
$τ_{n}$	electron SRH recombination lifetime	$2.4 \times 10^{- 5}$ to $1.7 \times 10^{- 9} s$
$τ_{p}$	hole SRH recombination lifetime	$1.4 \times 10^{- 5}$ to $4.3 \times 10^{- 10} s$
$C_{n, A u g e r}$	Auger recombination of electrons for Si at 300 K	$1.1 \times 10^{- 30} {c m}^{6} / s$
$C_{p, A u g e r}$	Auger recombination of holes for Si at 300 K	$3 \times 10^{- 31} {c m}^{6} / s$
$C_{r a d i a t i v e}$	radiative recombination coefficient for Si at 300 K	$1.1 \times 10^{- 14} {c m}^{3} / s$

	Top Surface		Bottom Surface
Height ( $h$ )	Width ( $w_{1}$ )	Length ( $ι_{1}$ )	Width ( $w_{2}$ )	Length ( $ι_{2}$ )	$T_{A Z O}$	Period ( $Λ$ )
100 nm	100 nm	160 nm	340 nm	500 nm	70 nm	500 nm

	Top Surface		Bottom Surface
Height ( $h$ )	Width ( $w_{1}$ )	Length ( $ι_{1}$ )	Width ( $w_{2}$ )	Length ( $ι_{2}$ )	$T_{A Z O}$	Period ( $Λ$ )
160 nm	50 nm	235 nm	445 nm	500 nm	70 nm	500 nm

Mohamed Farhat O. Hameed	https://orcid.org/0000-0001-5677-7685
S. S. A. Obayya	https://orcid.org/0000-0003-2436-0791

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