Raman mediated solitonic pulse compression

Akash Kumar Pradhan; Mrinal Sen; Tanmoy Datta

doi:10.1364/JOSAB.460267

Journal of the Optical Society of America B
Vol. 39,
Issue 6,
pp. 1686-1693
(2022)
•https://doi.org/10.1364/JOSAB.460267

Raman mediated solitonic pulse compression

Akash Kumar Pradhan, Mrinal Sen, and Tanmoy Datta

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Akash Kumar Pradhan, Mrinal Sen, and Tanmoy Datta, "Raman mediated solitonic pulse compression," J. Opt. Soc. Am. B 39, 1686-1693 (2022)

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Abstract

A comprehensive analysis of Raman mediated solitonic compression of pulses inside a silicon nanocrystal embedded slotted photonic crystal waveguide (SPCW) is presented. The ultrahigh Raman gain coefficient of the silicon nanocrystal material, being fortified further by the intense optical confinement inside the SPCW, essentially outweighs the contribution of the Kerr in the self-phase modulation phenomenon that is responsible for the solitonic propagation of a pulse. This work particularly emphasizes the contribution of Raman nonlinearity in the soliton dynamics, which however has been neglected conventionally, leading to an unprecedented miniaturization in both the operating power and footprint. Spatiotemporal evolution of pulses inside the SPCW has been calculated using the nonlinear Schrödinger equation considering the slow-light regime. A compression factor as high as 44.3 is obtained using a 30 µm long SPCW with a peak input power of 8 mW at 1550 nm.

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No data were generated or analyzed in the presented research.

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Parameter	Value	Reference
Linear loss ( $α$ )	20 dB/cm	Considered
$β_{2}$ ( $\times 10^{- 21} s^{2} / m$ , $β_{3}$ ( $\times 10^{- 33} s^{3} / m)$	−5.7657, 1.014	Calculated
Group index ( $n_{g})$	18.14	Calculated
Effective area ( $a_{e f f}$ )	$0.107 \times 10^{- 12} m^{2}$	Calculated
$n^{K e r r}$ ( $\times 10^{- 17} m^{2} / W$ ), $β^{T P A}$ ( $\times 10^{- 11} m^{2} / W$ )	4, 50	[19]
Vibrational mode (m)	2	[27]
$Ω_{R, 1}$ , $Ω_{R, 2}$	15 THz, 15.6 THz	[27]
$G_{R, 1}$ , $G_{R, 2}$	149 cm/MW, 802 cm/MW	[16]
$Γ_{R, 1}$ , $Γ_{R, 2}$	1.178 THz, 0.23 THz	[27]
$τ_{1, 1}$ , $τ_{1, 2}$ , $τ_{2, 1}$ , $τ_{2, 2}$	$10.6 f s$ , $10.2 f s$ , $0.27 p s$ , $1.4 p s$	[27]

Platform	Length	Energy/Power	Fc	Reference
Experimental works
GaInP PhC	1 mm	12 pJ	5.4	[26]
Silicon PhC	396 µm	9 pJ	2.3	[7]
USRN Bragg grating	6 mm	8 pJ	5.7	[30]
USRN waveguide	7 mm	16.3 pJ	8.7	[8]
Simulation works
Tapered Si wire	25 mm	2 W	10	[10]
Inverse taper silicon	5.1 cm	10.63 W	17.8	[29]
Chalcogenide slot silicon	6 cm	0.109 W	12.3	[21]
This work	30 µm	8 mW/28.35 fJ	44.13

Parameter	Value	Reference
Linear loss ( $α$ )	20 dB/cm	Considered
$β_{2}$ ( $\times 10^{- 21} s^{2} / m$ , $β_{3}$ ( $\times 10^{- 33} s^{3} / m)$	−5.7657, 1.014	Calculated
Group index ( $n_{g})$	18.14	Calculated
Effective area ( $a_{e f f}$ )	$0.107 \times 10^{- 12} m^{2}$	Calculated
$n^{K e r r}$ ( $\times 10^{- 17} m^{2} / W$ ), $β^{T P A}$ ( $\times 10^{- 11} m^{2} / W$ )	4, 50	[19]
Vibrational mode (m)	2	[27]
$Ω_{R, 1}$ , $Ω_{R, 2}$	15 THz, 15.6 THz	[27]
$G_{R, 1}$ , $G_{R, 2}$	149 cm/MW, 802 cm/MW	[16]
$Γ_{R, 1}$ , $Γ_{R, 2}$	1.178 THz, 0.23 THz	[27]
$τ_{1, 1}$ , $τ_{1, 2}$ , $τ_{2, 1}$ , $τ_{2, 2}$	$10.6 f s$ , $10.2 f s$ , $0.27 p s$ , $1.4 p s$	[27]

Platform	Length	Energy/Power	Fc	Reference
Experimental works
GaInP PhC	1 mm	12 pJ	5.4	[26]
Silicon PhC	396 µm	9 pJ	2.3	[7]
USRN Bragg grating	6 mm	8 pJ	5.7	[30]
USRN waveguide	7 mm	16.3 pJ	8.7	[8]
Simulation works
Tapered Si wire	25 mm	2 W	10	[10]
Inverse taper silicon	5.1 cm	10.63 W	17.8	[29]
Chalcogenide slot silicon	6 cm	0.109 W	12.3	[21]
This work	30 µm	8 mW/28.35 fJ	44.13

Abstract

Data availability

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Figures (14)

Tables (2)

Equations (7)

Journal of the Optical Society of America B