Integrated photonics on the dielectrically loaded lithium niobate on insulator platform

Xu Han; Xu Han; Mingrui Yuan; Huifu Xiao; Guanghui Ren; Thach Giang Nguyen; Andreas Boes; Andreas Boes; Andreas Boes; Yikai Su; Arnan Mitchell; Yonghui Tian

doi:10.1364/JOSAB.482507

Journal of the Optical Society of America B
Vol. 40,
Issue 5,
pp. D26-D37
(2023)
•https://doi.org/10.1364/JOSAB.482507

Integrated photonics on the dielectrically loaded lithium niobate on insulator platform

Xu Han, Mingrui Yuan, Huifu Xiao, Guanghui Ren, Thach Giang Nguyen, Andreas Boes, Yikai Su, Arnan Mitchell, and Yonghui Tian

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Xu Han, Mingrui Yuan, Huifu Xiao, Guanghui Ren, Thach Giang Nguyen, Andreas Boes, Yikai Su, Arnan Mitchell, and Yonghui Tian, "Integrated photonics on the dielectrically loaded lithium niobate on insulator platform," J. Opt. Soc. Am. B 40, D26-D37 (2023)

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- Photonics
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About this Article
History
- Original Manuscript: December 2, 2022
- Revised Manuscript: January 30, 2023
- Manuscript Accepted: January 30, 2023
- Published: March 10, 2023
Virtual Issues
JOSA B Feature Issue: Integrated Lithium Niobate Photonics (2023)

Abstract

Thin-film lithium niobate on insulator (LNOI) is emerging as one of the promising platforms for integrated photonics due to the excellent material properties of lithium niobate, which includes a strong electro-optic effect, high second-order optical nonlinearity, a large optical transparency window, and low material loss. Although direct etching of lithium niobate has been adopted more widely in recent years, it remains to be seen if it will be adopted in foundry processes due to the incompatibility with standard CMOS fabrication processes. Thus, the scalability of the LNOI platform is currently still limited when compared with other platforms such as silicon photonics. Dielectrically loaded LNOI waveguides may present an alternative. These waveguides have been used to demonstrate a range of optical components with a simplified fabrication process while demonstrating competitive performance. In this contribution, we review the recent progress in dielectrically loaded LNOI waveguides, summarize the advantages and disadvantages of different loading materials, compare the performance of different platforms, and discuss the future of these platforms for photonic integrated circuits.

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Reference	Loading Material	Refractive Index	Device	$Γ_{LN}$	Propagation Loss
[25]	Silicon	$\sim 3.48$	Electro-optic modulator	81%	0.6 dB/cm
[26]	Silicon	$\sim 3.48$	Electro-optic modulator	58.2%	1.6 dB/cm
[48]	Silicon nitride	$\sim 2.0$	Electro-optic modulator	65%	0.28 dB/cm
[56]	Silicon nitride	$\sim 2.0$	Wavelength converter	90%	0.3 dB/cm
[62]	Silicon nitride	$\sim 2.0$	Passive	60%	0.25 dB/cm
[72]	Polymer	1.54	Electro-optic modulator	/	0.26 dB/cm
[73]	Polymer	1.54	Wavelength converter	/	2 dB/cm
[75]	Polymer	1.45	Wavelength converter	/	10 dB/cm
[80]	Titanium dioxide	$\sim 2.3$	/	90%	1.26 dB/cm
[81]	Tantalum pentoxide	2.1–2.2	Electro-optic modulator	/	5 dB/cm
[82]	Chalcogenide glass	2.22	Electro-optic modulator	60%	1.2 dB/cm
[83]	Silicon-rich nitride	$\sim 2.5$	Electro-optic modulator	72%	2.6 dB/cm

Reference	Loading Material	Structure	$V_{pi}$	$L$	$V_{pi} \cdot L$	3 dB EO Bandwidth
[25]	Silicon	MZI	4.45 V	0.5 cm	2.225 V·cm	110 GHz
[26]	Silicon	MZI	1.7 V	1.25 cm	2.13 V·cm	$> 70 G H z$
[48]	Silicon nitride	MZI	1.3 V	2.4 cm	3.12 V·cm	29 GHz
[52]	Silicon nitride	MZI	2.8 V	0.78 cm	2.184 V·cm	30 GHz
[53]	Silicon nitride	MZI	3.75 V	1 cm	3.75 V·cm	95 GHz
[72]	Polymer	Nanobeam	/	0.01 cm	/	28 GHz
[81]	Tantalum pentoxide	MZI	6.8 V	0.6 cm	4.08 V·cm	/
[82]	Chalcogenide glass	MZI	6.3 V	0.6 cm	3.8 V·cm	7 GHz
[83]	Silicon-rich nitride	Michelson interferometer	17.8 V	0.06 cm	1.06 V·cm	40 GHz

Reference	Loading Material	Structure	Waveguide Length	Conversion Efficiency
[56]	Silicon nitride	PPLNOI	5 mm	$160 % / W \cdot {c m}^{2}$
[59]	Silicon nitride	PPLNOI	4.8 mm	$1160 % / {W \cdot c m}^{2}$
[58]	Silicon nitride	Grating	4.9 mm	$1 % / W \cdot {c m}^{2}$
[73]	Polymer	BIC waveguide	5 mm	$0.175 % / W \cdot {c m}^{2}$
[75]	Polymer	BIC waveguide	2.5 mm	$4.05 % / W \cdot {c m}^{2}$

Reference	Loading Material	Refractive Index	Device	$Γ_{LN}$	Propagation Loss
[25]	Silicon	$\sim 3.48$	Electro-optic modulator	81%	0.6 dB/cm
[26]	Silicon	$\sim 3.48$	Electro-optic modulator	58.2%	1.6 dB/cm
[48]	Silicon nitride	$\sim 2.0$	Electro-optic modulator	65%	0.28 dB/cm
[56]	Silicon nitride	$\sim 2.0$	Wavelength converter	90%	0.3 dB/cm
[62]	Silicon nitride	$\sim 2.0$	Passive	60%	0.25 dB/cm
[72]	Polymer	1.54	Electro-optic modulator	/	0.26 dB/cm
[73]	Polymer	1.54	Wavelength converter	/	2 dB/cm
[75]	Polymer	1.45	Wavelength converter	/	10 dB/cm
[80]	Titanium dioxide	$\sim 2.3$	/	90%	1.26 dB/cm
[81]	Tantalum pentoxide	2.1–2.2	Electro-optic modulator	/	5 dB/cm
[82]	Chalcogenide glass	2.22	Electro-optic modulator	60%	1.2 dB/cm
[83]	Silicon-rich nitride	$\sim 2.5$	Electro-optic modulator	72%	2.6 dB/cm

Reference	Loading Material	Structure	$V_{pi}$	$L$	$V_{pi} \cdot L$	3 dB EO Bandwidth
[25]	Silicon	MZI	4.45 V	0.5 cm	2.225 V·cm	110 GHz
[26]	Silicon	MZI	1.7 V	1.25 cm	2.13 V·cm	$> 70 G H z$
[48]	Silicon nitride	MZI	1.3 V	2.4 cm	3.12 V·cm	29 GHz
[52]	Silicon nitride	MZI	2.8 V	0.78 cm	2.184 V·cm	30 GHz
[53]	Silicon nitride	MZI	3.75 V	1 cm	3.75 V·cm	95 GHz
[72]	Polymer	Nanobeam	/	0.01 cm	/	28 GHz
[81]	Tantalum pentoxide	MZI	6.8 V	0.6 cm	4.08 V·cm	/
[82]	Chalcogenide glass	MZI	6.3 V	0.6 cm	3.8 V·cm	7 GHz
[83]	Silicon-rich nitride	Michelson interferometer	17.8 V	0.06 cm	1.06 V·cm	40 GHz

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