Abstract

The phase change material vanadium dioxide (${{\rm VO}_2}$) is suitable for building high-efficiency light modulators due to the different absorption efficiency of light in metallic and insulating states. The structure of an electro-absorption modulator based on ${{\rm VO}_2}$ and graphene proposed in this paper is formed by two layers of single-layer graphene wrapped around ${{\rm VO}_2}$, with a silicon waveguide in the middle and silica on both sides as the main path for light transmission. The input light of TE mode is limited to the ${{\rm SiO}_2}$ layer on both sides to increase the contact area with ${{\rm VO}_2}$ layers, which make it almost impossible to pass through when the metal electrode is connected to an external bias voltage and ${{\rm VO}_2}$ is in the metallic state. On the contrary, the input light passes through the main path of the modulation region with low loss without bias voltage. Finally, the modulator proposed in this paper has achieved a high extinction ratio of 27.3 dB and a low insertion loss of 0.66 dB (when ${{\rm VO}_2}$ is in insulating state) at a single wavelength of 1550 nm when the device length is 2 µm. In addition, the bias voltage of the modulator is 1.1 V with the modulation speed at 200 MHz, and the energy consumption is only 8.3083 fJ/bit at work, which is an ideal choice for photonic integrated systems today.

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