Abstract
Theoretical analysis of temporal behavior of the semiconductor injection laser in a large signal approximation is described. The parameters of the statistical limit cycle are calculated for the case of deep pulsation when the minimum of the pulse intensity is compared with the spontaneous emission level. Spectral characteristics of the injection laser under high-frequency modulation are presented. Chirping of the wavelength is calculated, and the phase trajectories are determined experimentally.
© 1988 Optical Society of America
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