Abstract
We develop a general numerical method for investigating nonlinear guided-wave phenomena in semiconductors including the effects of carrier diffusion. The macroscopic field evolution is handled by using the beam-propagation method, and the microscopic semiconductor response is obtained from a previously developed plasma theory. Coupled field–matter equations are given and solved numerically for a nonlinear directional coupler by using the material parameters of the room-temperature, bulk semiconductors GaAs and CdSe.
© 1989 Optical Society of America
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