Abstract

Laser-induced irreversible changes of luminescence intensity and lifetime have been systematically investigated in CdS_xSe_1–x-doped glass in order to clarify the laser-induced carrier-recombination process. These changes proceed at different rates, depending on the laser’s irradiation time, intensity, and sample temperature. A new phenomenological model for this laser-induced process is proposed in which a new recombination route for carriers is created in the trapping state by activation of a distributed potential barrier of this state.

© 1990 Optical Society of America

Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glasses

Masaharu Mitsunaga, Hiroyuki Shinojima, and Ken-ichi Kubodera
J. Opt. Soc. Am. B 5(7) 1448-1452 (1988)

Intensity-dependent absorption and luminescence in semiconductor-doped glasses

Martin Kull and Jean-Louis Coutaz
J. Opt. Soc. Am. B 7(8) 1463-1472 (1990)

Laser-induced darkening in semiconductor-doped glasses

J. Malhotra, D. J. Hagan, and B. G. Potter
J. Opt. Soc. Am. B 8(7) 1531-1536 (1991)

Photodarkening effect on absorption nonlinearity in CdSxSe₁₋x-doped glass

P. Malý, E Trojánek, and A. Svoboda
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Intensity-dependent micro-Raman and photoluminescence investigations of CdS_xSe_1-x nanocrystallites

T. Bischof, G. Lermann, B. Schreder, A. Materny, W. Kiefer, and M. Ivanda
J. Opt. Soc. Am. B 14(12) 3334-3341 (1997)