Abstract
Quantum dots were designed within a GRIN-SCH(Graded index - Separate
confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs
laser diode. 808 nm light emission was with a quantum dot composition of
In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation
software. Typical characteristics of GRIN structures such as high confinement ratios
and Gaussian beam profiles were shown to still apply when quantum dots are used as
the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers
were found to be good enough for low threshold, high-power laser
applications.
© 2011 Optical Society of Korea
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