Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of the Optical Society of Korea
  • Vol. 15,
  • Issue 2,
  • pp. 124-127
  • (2011)

Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

Open Access Open Access


Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

© 2011 Optical Society of Korea

PDF Article

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Select as filters

Select Topics Cancel
© Copyright 2023 | Optica Publishing Group. All Rights Reserved