Abstract

We analyzed experimental photoluminescence data obtained by various researchers on CdHgTe-based structures with single quantum wells. All of the papers reviewed, with the exception of the results obtained by the authors of this paper, only described the detection of a single band of optical transitions in the quantum well following optical pumping in the emission spectra. The authors of this paper were able to obtain at least two emission bands. The emission recorded was most likely due to interband radiative transitions in the quantum well.

© 2016 Optical Society of America

Mid-IR lasing in HgCdTe multiple quantum well edge-emitting ridges

Vladimir Utochkin, Konstantin Kudryavtsev, Vladimir Rumyantsev, Mikhail Fadeev, Anna Razova, Nikolai Mikhailov, Dmitry Shengurov, Sergey Gusev, Nikita Gusev, and Sergey Morozov
Appl. Opt. 62(32) 8529-8534 (2023)

Transient memory effect in the photoluminescence of InGaN single quantum wells

Christian Feldmeier, Masayoshi Abiko, Ulrich T. Schwarz, Yoichi Kawakami, and Ruggero Micheletto
Opt. Express 17(25) 22855-22860 (2009)

Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells

Mounir D. Mensi, Daniel L. Becerra, Ruslan Ivanov, Saulius Marcinkevičius, Shuji Nakamura, Steven P. DenBaars, and James S. Speck
Opt. Mater. Express 6(1) 39-45 (2016)

Coherent manipulation of spontaneous emission spectra in coupled semiconductor quantum well structures

Aixi Chen
Opt. Express 22(22) 26991-27000 (2014)

Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well

Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu
Opt. Mater. Express 8(9) 2795-2802 (2018)