Abstract

Subject of study. A method for the sulfide–polyamide surface passivation of mesa structures of InAlAs/InGaAs avalanche photodiodes was considered and the static properties of the fabricated crystals of InAlAs/InGaAs avalanche photodiodes were investigated. Aim of study. The study aimed to investigate the effect of sulfide–polyamide surface passivation of mesa structures on the principal parameters of an avalanche photodiode. Method. Sulfide–polyamide surface passivation of a mesa structure entails processing the surface in an aqueous solution of ammonium sulfide followed by the application of a protective layer of AD-9103-30 polyamide. Main results. Avalanche photodiodes based on InAlAs/InGaAs heterostructures were fabricated and investigated. The surface of the mesa structure of avalanche photodiodes underwent sulfide–polyamide passivation. Crystals of avalanche photodiodes with an active area diameter of 32 µm reproducibly ensured a dark current of 10–20 nA under an applied voltage of 0.9 of the breakdown voltage, uniform distribution of the breakdown voltage value across the sample area, and the long-term stability of parameters. Spectral sensitivity values of the devices in the 1550 nm region were 0.85–0.88 A/W, and their capacitance values were 0.11–0.12 pF. Ensuring the reproducibility and long-term stability of parameters is crucial to passivation technology. Parameter measurements of the avalanche photodiode crystals with sulfide–polyamide passivation performed with a 6-month interval confirmed the temporal stability of the dark current at the level of 5%. Practical significance. The proposed method for the surface passivation of the mesa structure of InAlAs/InGaAs avalanche photodiodes entailing processing in an aqueous solution of ammonium sulfide followed by the application of a protective layer of AD-9103-30 polyamide can be used to fabricate avalanche photodiodes with a reproducible low level of dark current.

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